Multi-disc chemical vapor deposition system with cross flow gas injection

A multi-wafer metal organic chemical vapor deposition system in which adjacent wafers positioned within the system rotate about their own axes, the system comprising:

• a reaction chamber having an exhaust system and a ceiling;
• a multi-wafer carrier including a wafer carrier body and a plurality of wafer carrier discs supported within the wafer carrier body;
• a showerhead ceiling injector positioned along the ceiling over the multi-wafer carrier for injecting gas into the reaction chamber, the showerhead ceiling injector including a top ceiling plate and a lower ceiling plate spaced from the top ceiling plate with an open gas distribution space formed therein, the lower ceiling plate having showerhead holes formed therethrough for injecting the gas into the reaction chamber.
• a ceiling heater assembly disposed along the ceiling showerhead ceiling injector for heating the ceiling of the reaction chamber;
• a center gas injector positioned in a center of the multi-wafer carrier, the center gas injector comprising a reactant gas inlet port with a plurality of injection zones;
• and
• a susceptor heater assembly positioned beneath the multi-wafer carrier;
• wherein the ceiling heater assembly operates at a first temperature that is different than a second temperature at which the susceptor heater assembly operates to permit a temperature gradient between the ceiling and the wafer-carrier body to be reduced to suppress convection by temperature gradient towards the ceiling.

A multi-wafer metal organic chemical vapor deposition system in which adjacent wafers positioned within the system rotate about their own axes, the system comprising:

• a reaction chamber having an exhaust system and a ceiling;
• a multi-wafer carrier including a wafer carrier body and a plurality of wafer carrier discs supported within the wafer carrier body, wherein the wafer carrier body comprises a segmented wafer carrier body with each segment including one wafer carrier disc;
• a ceiling heater assembly disposed along the ceiling above the multi-wafer carrier for heating the ceiling of the reaction chamber;
• a ceiling injector positioned along the ceiling over the multi-wafer carrier for injecting gas into the reaction chamber;
• a stationary center gas flow port positioned in a center of the multi-wafer carrier,
• a susceptor heater assembly positioned beneath the multi-wafer carrier, and
• a gas drive mechanism that includes a plurality of gas feeds located below the center gas flow port and concentric to a center vertical axis of the reaction chamber and radially inward from the wafer carrier discs.