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US 2024/0174924 A1Published application
Etching compositions
AssigneeFujifilm Electronic Materials U.S.A., Inc.
InventorsEmil A. Kneer, William A. Wojtczak
Life of this patent
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Abstract
The present disclosure is directed to etching compositions that are useful for, e.g., selectively removing titanium nitride (TiN) from a semiconductor substrate without substantially forming a cobalt oxide hydroxide layer.
Claims24
-18. (canceled)
A method, comprising:
- contacting a semiconductor substrate containing a TiN feature with an etching composition to remove the TiN feature, wherein the etching composition comprises:
- 1) at least one oxidizing agent;
- 2) at least one unsaturated carboxylic acid;
- 3) at least one metal corrosion inhibitor;
- and
- 4) water.
3 more elements
(canceled)
(canceled)
Dependencies are inferred from the claim text.