Metal wiring manufacturing method, transistor manufacturing method, and metal wiring

A wiring, comprising:

• a first layer over a substrate, the first layer containing a first material;
• and
• a second layer over the first layer, the second layer containing a second material,
• wherein a part of the second layer extends into the first layer so as to fill a crack gap of the first layer,
• wherein a resistance increase rate of a resistance value of the wiring from before a bending test to after the bending test is 7.0% or less, the bending test being performed using a tension-free planar body U-shape folding test machine under a test condition where a length of the wiring is 40 mm, a bending radius is 5 mm, and a bending number is 100 times.

A wiring provided on a substrate, comprising:

• a first layer and a second layer in order from bottom in the film thickness direction,
• wherein the first layer includes a first region containing a first material and a second region containing a second material,
• wherein the second layer contains the second material,
• wherein the second region fills a crack gap of the first region.

A method of manufacturing a wiring, comprising the steps of:

• forming a first layer containing a first material over at least part on a substrate;
• forming a crack in the first layer;
• and
• forming a second layer containing a second material inside the first layer so as to fill the crack in the first layer and over a top of the first layer.