Light-emitter device with induced defects and method of manufacturing the light emitter device

A device, comprising:

• a body of solid-state material;
• and
• a P-N junction in the body, including:
• a cathode region, having a conductivity of N-type;
• an anode region, having a conductivity of P-type, extending in direct contact with the cathode region;
• a light-emitting surface on the anode region;
• and
• a depletion region around an interface between the anode and the cathode regions,
• at least one indentation that extends towards the depletion region in the light-emitting surface;
• a peak defectiveness area in the depletion region that includes irregularities in crystal lattice, in correspondence of the at least one indentation;
• and
• a plurality of indentations in a matrix with the at least one indentation, each one of the plurality of indentations extending from the light-emitting surface towards the depletion region, the depletion region has a respective plurality of peak defectiveness areas, including irregularities in crystal lattice, in correspondence of each of the indentations of the plurality of indentations.

A method of manufacturing a light-emitter device, comprising:

• forming a P-N junction in body of solid-state material, including:
• forming a depletion region around an interface between an anode region and a cathode region, the anode region defining a light-emitting surface;
• forming the cathode region having N-type conductivity;
• and
• forming the anode region having P-type conductivity and in direct contact with the cathode region:
• generating a peak defectiveness area, housing irregularities in crystal lattice, in the depletion region in correspondence of at least one indentation by forming, at the light-emitting surface, the at least one indentation that extends towards the depletion region.