Passivation equipment and passivation method for semiconductor device

A passivation method for a semiconductor device, comprising:

• providing a passivation equipment, wherein the passivation equipment comprises:
• a chamber housing;
• a splitter, disposed in the chamber housing, wherein the splitter divides the chamber housing into a first chamber and a second chamber;
• a plasma producing unit, disposed in the first chamber;
• a first intake tube, connected to the first chamber;
• and
• a pressure detecting unit, connected to the first chamber;
• placing at least a semiconductor device in the second chamber;
• inserting a reacting gas into the first chamber by the first intake tube to make a pressure of the first chamber not smaller than 1 atm;
• turning on the plasma producing unit to produce a high-pressure plasma;
• and
• performing a passivating operation, wherein the passivating operation comprises flowing the high-pressure plasma to the second chamber through the splitter and reacting with the at least a semiconductor device.

A passivation equipment for a semiconductor device, comprising:

• a chamber housing;
• a splitter, disposed inside the chamber housing, wherein the splitter divides the chamber housing into a first chamber and a second chamber, a pressure of the first chamber is greater than or equal to 1 atm, and the second chamber is configured to accommodate at least a semiconductor device;
• a first intake tube, connected to the first chamber, wherein the first intake tube is configured to insert a reacting gas;
• a second intake tube, connected to the first chamber and the second chamber, wherein the second intake tube is configured to insert an inert gas;
• a plasma producing unit, disposed in the first chamber;
• and
• an exhaust pipe, connected to the second chamber, wherein the exhaust pipe is configured to exhaust the reacting gas.