Inorganic/organic hybrid complementary semiconductor device and method for manufacturing same

A method for manufacturing an inorganic/organic hybrid complementary semiconductor device, the method comprising:

• providing a substrate;
• forming an n-type structure on the substrate;
• forming a protective layer on the n-type structure;
• and
• forming a p-type structure on the protective layer, wherein
• the forming the n-type structure includes:
• preparing a precursor solution of an n-type amorphous metal oxide inorganic semiconductor containing a metal salt by using a sol-gel method,
• forming a precursor film by applying the precursor solution on the substrate, and
• forming an n-type amorphous metal oxide inorganic semiconductor layer by heat-treating the precursor film at 350° C. to 400° C.,
• the forming the p-type structure includes forming a p-type organic semiconductor single crystal layer by using a coating method,
• when viewed from a direction perpendicular to a main surface of the p-type organic semiconductor single crystal layer, the p-type organic semiconductor single crystal layer is disposed and thus at least a part of the p-type organic semiconductor single crystal layer overlaps the n-type amorphous metal oxide inorganic semiconductor layer or the p-type organic semiconductor single crystal layer does not overlap the n-type amorphous metal oxide inorganic semiconductor layer,
• a distance between the p-type organic semiconductor single crystal layer and the n-type amorphous metal oxide inorganic semiconductor layer is 1 mm or less, and
• the n-type amorphous metal oxide inorganic semiconductor layer has a distribution of an oxygen defect amount in a thickness direction in which the oxygen defect amount is larger on the p-type organic semiconductor single crystal layer side than on the substrate side.