Method of manufacturing semiconductor devices, corresponding semiconductor device, assembly and support substrate

A device, comprising:

• a support substrate having a first thickness between the first surface and a second surface opposite the first surface and comprising a die pad and an array of electrically conductive leads around the die pad;
• a semiconductor die arranged on the die pad;
• terminal recesses in the electrically conductive leads of the array of electrically conductive leads at the first surface of the support substrate, wherein at said terminal recesses said electrically conductive leads in the array of electrically conductive leads have a second thickness less than said first thickness;
• electrically conductive elongated formations electrically coupling the semiconductor die with said electrically conductive leads in the array of electrically conductive leads, the electrically conductive elongated formations having ends coupled to the electrically conductive leads in the array of electrically conductive leads arranged in said terminal recesses;
• and
• a partial cut in the support substrate starting from the second surface, the partial cut being located at said terminal recesses and with a cutting depth between the first thickness and the second thickness, wherein the partial cut leaves exposed surfaces of the support substrate and the ends of the electrically conductive elongated formations.

An assembly, comprising:

• a semiconductor device mounting member;
• and
• a device mounted onto said mounting member via solder material;
• wherein the device comprises:
• a support substrate having a first thickness between the first surface and a second surface opposite the first surface and comprising a die pad and an array of electrically conductive leads around the die pad;
• a semiconductor die arranged on the die pad;
• terminal recesses in the electrically conductive leads of the array of electrically conductive leads at the first surface of the support substrate, wherein at said terminal recesses said electrically conductive leads in the array of electrically conductive leads have a second thickness less than said first thickness;
• electrically conductive elongated formations electrically coupling the semiconductor die with said electrically conductive leads in the array of electrically conductive leads, the electrically conductive elongated formations having ends coupled to the electrically conductive leads in the array of electrically conductive leads arranged in said terminal recesses;
• and
• a partial cut in the support substrate starting from the second surface, the partial cut being located at said terminal recesses and with a cutting depth between the first thickness and the second thickness, wherein the partial cut leaves exposed surfaces of the support substrate and the ends of the electrically conductive elongated formations;
• wherein the solder material exhibits a solder meniscus at exposed surfaces of both the support substrate and the ends of the electrically conductive elongated formations.