Euv-induced condensation of polysiloxane sol-gel thin film
AssigneeBrewer Science Inc.
InventorDaniel Patrick Sweat
Life of this patent
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Abstract
Methods for direct patterning of a silicon hardmask with extreme ultraviolet (EUV) radiation are provided. The method involves forming a polysiloxane and/or oligosiloxane composition into a silicon hardmask layer followed by solvent removal. Without using a photoresist and/or other layer silicon hardmask layer, condensation of the siloxane sol-gel polymers and/or oligomers is induced by EUV radiation, rendering the exposed portions insoluble in typical lithography solvents or developers. The exposed portions of the silicon hardmask layer are removed, leaving a pattern in the silicon hardmask layer that can be transferred to any layers below the silicon hardmask layer, and ultimately to the substrate.
Claims32
A method of forming a structure, said method comprising:
- forming a silicon hardmask layer on a stack, said layer comprising a siloxane chosen from polysiloxanes, oligosiloxanes, or both, said siloxane comprising monomers chosen from tetraethoxysilane, methyltrimethoxysilane, isobutyltrimethoxysilane, phenyltrimethoxysilane, nonafluorohexyltriethoxysilane, 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, or combinations thereof;
- and
- selectively exposing said silicon hardmask layer to EUV radiation so as to induce condensation of said siloxane.
A structure comprising:
- a substrate comprising a surface;
- optionally one or more intermediate layers on said substrate surface, there being an uppermost intermediate layer on said substrate surface, if one or more intermediate layers are present;
- and
- a silicon hardmask layer on said substrate surface, or on said uppermost intermediate layer, if present, said silicon hardmask layer comprising:
- a siloxane comprising a polysiloxane, an oligosiloxane, or both, said siloxane comprising monomers chosen from tetraethoxysilane, methyltrimethoxysilane, isobutyltrimethoxysilane, phenyltrimethoxysilane, nonafluorohexyltriethoxysilane, 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, or combinations thereof;
- first areas comprising condensed siloxane;
- and
- second areas comprising uncondensed siloxane.
A method of forming a structure, said method comprising:
- forming a silicon hardmask layer on a stack, said layer comprising:
- a photoacid generator;
- a siloxane chosen from polysiloxanes, oligosiloxanes, or both, wherein at least one of the following is true:
- (i) said siloxane does not include Si—H bonds;
- (ii) said siloxane comprises at least 3 Si—O bonds per Si atom;
- or
- (iii) said siloxane comprises at least 3 times more Si—O bonds than Si—H bonds;
- and
- selectively exposing said silicon hardmask layer to EUV radiation so as to induce condensation of said siloxane.
A structure comprising:
- a substrate comprising a surface;
- optionally one or more intermediate layers on said substrate surface, there being an uppermost intermediate layer on said substrate surface, if one or more intermediate layers are present;
- and
- a silicon hardmask layer on said substrate surface, or on said uppermost intermediate layer, if present, said silicon hardmask layer comprising:
- a siloxane chosen from polysiloxanes, oligosiloxanes, or both, wherein at least one of the following is true:
- (i) said siloxane does not include Si—H bonds;
- (ii) said siloxane comprises at least 3 Si—O bonds per Si atom;
- or
- (iii) said siloxane comprises at least 3 times more Si—O bonds than Si—H bonds;
- first areas comprising condensed siloxane;
- and
- second areas comprising uncondensed siloxane and a photoacid generator.
Dependencies are inferred from the claim text.