Semiconductor package including bumps with a plurality of separation distances

A semiconductor package comprising:

• a first semiconductor chip comprising:
• a first substrate comprising a first surface and a second surface opposite to the first surface;
• a plurality of power vias penetrating at least a portion of the first substrate between the first surface and the second surface of the first substrate;
• and
• a plurality of first upper pads on the first surface of the first substrate at different intervals;
• a second semiconductor chip comprising:
• a second substrate comprising a third surface and a fourth surface opposite to the third surface;
• and
• a plurality of second lower pads, corresponding to the plurality of first upper pads, on the fourth surface of the second substrate;
• a plurality of bumps between the first semiconductor chip and the second semiconductor chip and connecting the plurality of first upper pads to the plurality of second lower pads;
• a first non-conductive film on the fourth surface of the second semiconductor chip;
• and
• a second non-conductive film between the first non-conductive film and the first semiconductor chip;
• wherein a plurality of regions are defined in the semiconductor package according to a separation distance between the plurality of bumps, such that each region of the plurality of regions comprises respective bumps, from among the plurality of bumps, that have a respective separation distance between neighboring ones of the respective bumps within the region, and
• wherein an elastic modulus of the first non-conductive film and an elastic modulus of the second non-conductive film are different from each other.

A semiconductor package comprising:

• a semiconductor chip comprising:
• a substrate comprising a first surface and a second surface opposite to the first surface;
• and
• a plurality of lower pads on the second surface;
• a plurality of bumps attached to the plurality of lower pads;
• a first non-conductive film on the second surface;
• and
• a second non-conductive film on the first non-conductive film,
• wherein an elastic modulus of the second non-conductive film is greater than an elastic modulus of the first non-conductive film,
• wherein a plurality of regions are defined in the semiconductor package according to a separation distance between the plurality of bumps, such that each region of the plurality of regions comprises respective bumps, from among the plurality of bumps, that have a respective separation distance between neighboring ones of the respective bumps within the region,
• wherein the plurality of regions comprises:
• a first region that comprises at least a part of each of four sides of the second surface of the semiconductor chip;
• a second region that comprises four vertices of the second surface of the semiconductor chip;
• and
• a third region that comprises a central region of the second surface of the semiconductor chip,
• wherein a sum of thicknesses of the first non-conductive film and the second non-conductive film is the same as a sum of thicknesses of the plurality of bumps and the plurality of lower pads,
• wherein the separation distance between the neighboring ones of the respective bumps of the first region is greater than the separation distance between the neighboring ones of the respective bumps of the second region and the separation distance between the neighboring ones of the respective bumps of the third region, and
• wherein a thickness of a portion of the first non-conductive film in the first region is less than thicknesses of portions of the first non-conductive film in the second region and the third region.