Luminescence method for the in-line detection of atomic scale defects during fabrication of 4h-sic diodes
AssigneeThe University of Hong Kong
InventorsChi Chung Francis Ling, Sihua Li, Lok Ping Ho, Wing Chong Tony Chau
Life of this patent
Estimating the term…
Abstract
A method of detecting atomic scale defects in semiconductors, comprising the steps of scanning the surface of the semiconductor with a field emission scanning electron microscope (SEM) to form an SEM image thereof; scanning the SEM image with a light detector and monochromator to obtain a cathodoluminescence (CL) spatial intensity map of the SEM image; determining the CL spectra, i.e. the CL intensity against photon energy for each integral CL intensity; and comparing the CL intensity to a threshold, whereby those semiconductors whose CL intensity is above the threshold are deemed to be defective
Claims8
A method of detecting atomic scale defects in semiconductors, comprising the steps of
- scanning the surface of the semiconductor with a field emission scanning electron microscope (SEM) to form an SEM image thereof;
- scanning the SEM image with a light detector and monochromator to obtain a cathodoluminescence (CL) spatial intensity map of the SEM image;
- determining the CL spectra, i.e. the CL intensity against photon energy for each integral CL intensity;
- and
- comparing the CL intensity to a threshold, whereby those semiconductors whose CL intensity is above the threshold are deemed to be defective.
Dependencies are inferred from the claim text.