Nitride-based mxene light-emitting quantum dot and method of manufacturing the same
AssigneeResearch & Business Foundation Sungkyunkwan University
InventorsAnir S. SHARBIRIN, Jeongyong KIM
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Abstract
There are provided a nitride-based MXene light-emitting quantum dot and a method of manufacturing the same. The nitride-based MXene light-emitting quantum dot includes a nitride-based MXene quantum dot having a diameter of 10 nm or less and absorbs ultraviolet light to emit light, and the nitride-based MXene light-emitting quantum dot has an effect of efficiently generating light emission by increasing bandgap energy of MXene by inducing a quantum confinement effect by reducing the size of the quantum dot.
Claims11
A nitride-based MXene light-emitting quantum dot comprising a nitride-based MXene quantum dot having a diameter of 10 nm or less, wherein the nitride-based MXene light-emitting quantum dot absorbs ultraviolet light to emit light.
A method of manufacturing a nitride-based MXene light-emitting quantum dot, the method comprising:
- manufacturing a nitride-based MXene by treating a nitride-based MAX phase with an acidic solution;
- delaminating the nitride-based MXene through ultrasonic treatment;
- and synthesizing the nitride-based MXene light-emitting quantum dot by performing hydrothermal synthesis on the delaminated nitride-based MXene.
Dependencies are inferred from the claim text.