Depositing Station And Device For Generating Contact Metallizations

The depositing station according to any one of the preceding claims,

• characterized in that
• the basin (13, 81) has an outlet (30), preferably disposed on the side of the basin, for draining the solution from the basin.

The depositing station according to any one of the preceding claims,

• characterized in that
• the basin arrangement (11, 80) comprises an additional basin (34, 82), the basin (13, 81) being inserted into the additional basin.

The depositing station according to any one of the preceding claims,

• characterized in that
• the basin (13, 81) is configured such that a transport receptacle (14, 84, 95) having a plurality of objects, in particular wafers (15, 85, 96), received therein is insertable into the basin from above.

The depositing station according to any one of the preceding claims,

• characterized in that
• the basin arrangement (11, 77, 80) has a filling level measuring device (45) which is configured to measure a filling level.

The depositing station according to any one of the preceding claims,

• characterized in that
• the basin arrangement (11, 77, 80) and/or the depositing station (10, 71, 78, 98, 99) has a heating device (46) which is configured to heat the solution.

The depositing station according to any one of the preceding claims,

• characterized in that
• the basin arrangement (11, 77, 80) has a lid (49, 83) which covers an opening (50) of the basin (13, 81) in a closed position of the lid.

The depositing station according to any one of the preceding claims,

• characterized in that
• the depositing station (10, 71, 78, 98, 99) comprises a tube assembly (54) which integrates the depositing station into a fluid circuit (55).

The depositing station according to any one of the preceding claims,

• characterized in that
• the depositing station (10, 71, 78, 98, 99) comprises a valve arrangement (59) which is configured to empty the basin arrangement (11, 77, 80).

The depositing station according to any one of the preceding claims,

• characterized in that
• the depositing station (10, 71, 78, 98, 99) comprises a sample-analysis device (60, 75) which is configured to take a sample of the solution, preferably from the basin arrangement (11, 77, 80), and to analyze said sample, in particular regarding a pH value of the sample.

The depositing station according to any one of the preceding claims,

• characterized in that
• the depositing station (10, 71, 78, 98, 99) comprises a cooling device (47, 76).

The depositing station according to any one of the preceding claims,

• characterized in that
• the depositing station (10, 71, 78, 98, 99) comprises a dosing arrangement (61) having at least one container (62) for receiving a component contained in the solution and having at least one dosing pump (63) which is assigned to the container, the dosing arrangement being configured to dose the component in the solution.

The depositing station according to any one of the preceding claims,

• characterized in that
• the basin arrangement (11, 77, 80) has a moving device (86) which is configured to preferably vertically move the object in the processing chamber (12).

A device (69, 94) for producing contact metallizations on terminal faces of wafers, comprising at least one depositing station (10, 71, 78, 98, 99) according to any one of the preceding claims, a processing chamber (12) of the depositing station being configured to receive a transport receptacle (14, 84, 95) having a plurality of wafers (15, 85, 96) received therein, the device having a manipulator (16, 102) for handling the transport receptacle.