Barrier layers for anisotropic magneto-resistive sensors

A semiconductor device, comprising:

• a substrate including a semiconductor circuit;
• a dielectric layer disposed over the substrate, the dielectric layer including a conductive pad coupled to the semiconductor circuit;
• a barrier layer disposed on the dielectric layer;
• a conductive via with a first end connected to the conductive pad, the conductive via extending from the conductive pad through the dielectric layer and the barrier layer;
• and
• an anisotropic magneto-resistive (AMR) stack disposed over the barrier layer, wherein the AMR stack is in contact with a second end of the conductive via opposite the first end.

A semiconductor device, comprising:

• a substrate including a semiconductor circuit;
• a protective overcoat layer disposed over the substrate, the protective overcoat layer including a conductive pad coupled to the semiconductor circuit;
• a silicon nitride layer disposed on the protective overcoat layer;
• a conductive via with a first end connected to the conductive pad, the conductive via extending from the conductive pad through the protective overcoat layer and the silicon nitride layer;
• and
• an anisotropic magneto-resistive (AMR) stack disposed over the silicon nitride layer, wherein the AMR stack is in contact with a second end of the conductive via opposite the first end.