# US 2024/0096592 A1 · Optimized saddle nozzle design for gas injection system > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2024/0096592 A1 - Document ID: US20240096592A1 - Status: Published application - Kind: A1 - Application number: 17/945,338 - Filed: 2022-09-15 - Published: 2024-03-21 - Earliest claimed: 2022-09-15 - Assignees: Applied Materials Israel Ltd. - Applicants: Applied Materials Israel Ltd. - Inventors: Yehuda Zur - Web page: https://patentgrep.com/patent/US20240096592A1 ## CPC - H01J 37/317: for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation (H01J37/36 takes precedence) - H01J 37/3178: {for applying thin layers on objects} - C23C 14/221: {Ion beam deposition (C23C14/46, C23C14/48 take precedence)} - H01J 37/02: Details - H01J 37/1474: {Scanning means} - H01J 2237/006: Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece, (H01J37/3244 takes precedence; environmental cells for electron microscopes H01J2237/2003; microscopes with environmental specimen chamber H01J2237/2608) - H01J 2237/31713: Focused ion beam - H10P 14/418: {the conductive layers comprising transition metals} - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A gas injection nozzle that includes an elongated gas conduit that comprises: a first gas conduit segment configured to be coupled with a gas reservoir; a second gas conduit segment fluidly coupled to the first gas conduit segment and defining a downward curve of the elongated gas conduit; a third gas conduit segment defining an upward curve of the elongated gas conduit that extends to a sealed end and is disposed in a mirrored relationship with at least a portion of the second gas conduit; and a central gas conduit segment coupled between the second and third gas conduit segments, the central gas conduit segment having a first aperture formed in an upper surface of the central gas conduit and a second aperture, larger than the first aperture, formed in a lower surface of the central gas conduit directly across from the first aperture, wherein the elongated gas conduit has a first diameter along a portion of its length that includes at least the second, third and central gas conduit segments and wherein the central gas conduit segment includes a substantially horizontal portion that extends on each side of the first and second apertures for a distance that is at least twice the first diameter of the gas conduit. ## Claims ### Claim 1 A gas injection nozzle that includes an elongated gas conduit comprising: a first gas conduit segment configured to be coupled with a gas reservoir; a second gas conduit segment fluidly coupled to the first gas conduit segment and defining a downward curve of the elongated gas conduit; a third gas conduit segment defining an upward curve of the elongated gas conduit that extends to a sealed end and is disposed in a mirrored relationship with at least a portion of the second gas conduit; and a central gas conduit segment coupled between the second and third gas conduit segments, the central gas conduit segment having a first aperture formed in an upper surface of the central gas conduit and a second aperture, larger than the first aperture, formed in a lower surface of the central gas conduit directly across from the first aperture, wherein the elongated gas conduit has an inner diameter along a portion of its length that includes at least the second, third and central gas conduit segments and wherein the central gas conduit segment includes a substantially horizontal portion that extends on each side of the first and second apertures for a distance that is at least twice the inner diameter of the gas conduit. ### Claim 2 (depends on 1) The gas injection nozzle set forth in claim 1 wherein the second aperture is has a diameter that is at least twice as large as a diameter of the first aperture. ### Claim 3 (depends on 1) The gas injection nozzle set forth in claim 1 wherein the substantially horizontal portion of the central gas conduit extends on each side of the first and second apertures for a distance that is at least three times the inner diameter of the gas conduit. ### Claim 4 (depends on 1) The gas injection nozzle set forth in claim 1 wherein the elongated gas conduit comprises stainless steel. ### Claim 5 (depends on 1) The gas injection nozzle set forth in claim 1 wherein an inner diameter of the elongated gas conduit is substantially constant throughout an entire length of the elongated gas conduit. ### Claim 6 (depends on 1) The gas injection nozzle set forth in claim 1 wherein the inner diameter of the elongated gas conduit is between 1500 and 300 microns. ### Claim 7 (depends on 1) The gas injection nozzle set forth in claim 1 wherein the inner diameter of the elongated gas conduit is between 1000 and 600 microns. ### Claim 8 A system for depositing material over a sample in a localized region of the sample, the system comprising: a vacuum chamber; a sample support configured to hold a sample within the vacuum chamber during a sample evaluation process; a charged particle beam column configured to direct a charged particle beam into the vacuum chamber toward the sample such that the charged particle beam collides with the sample in a deposition region; a gas injection system configured to deliver a process gas to the deposition region of the sample, the gas injection system including an elongated gas conduit comprising: a first gas conduit segment configured to be coupled with a gas reservoir; a second gas conduit segment fluidly coupled to the first gas conduit segment and defining a downward curve of the elongated gas conduit; a third gas conduit segment defining an upward curve of the elongated gas conduit that extends to a sealed end and is disposed in a mirrored relationship with at least a portion of the second gas conduit; and a central gas conduit segment coupled between the second and third gas conduit segments, the central gas conduit segment having a first aperture formed in an upper surface of the central gas conduit and a second aperture, larger than the first aperture, formed in a lower surface of the central gas conduit directly across from the first aperture, wherein the elongated gas conduit has an inner diameter along a portion of its length that includes at least the second, third and central gas conduit segments and wherein the central gas conduit segment includes a substantially horizontal portion that extends on each side of the first and second apertures for a distance that is at least twice the inner diameter of the gas conduit. ### Claim 9 (depends on 8) The system set forth in claim 8 wherein the charged particle beam column is a focused ion beam column and the charged particle beam is a focused ion beam. ### Claim 10 (depends on 8) The system set forth in claim 8 wherein the second aperture is has a diameter that is at least twice as large as a diameter of the first aperture. ### Claim 11 (depends on 8) The system set forth in claim 8 wherein the substantially horizontal portion of the central gas conduit extends on each side of the first and second apertures for a distance that is at least three times the inner diameter of the gas conduit ### Claim 12 (depends on 8) The system set forth in claim 8 wherein the elongated gas conduit comprises stainless steel. ### Claim 13 (depends on 8) The system set forth in claim 8 wherein the inner diameter of the elongated gas conduit is between 1500 and 300 microns. ### Claim 14 A method of depositing material over a sample in a deposition region of the sample with a charged particle beam column, the method comprising: positioning a sample within a vacuum chamber such that the deposition region is under a field of view of the charged particle beam column; injecting a deposition precursor gas, with a gas injection system including an elongated gas conduit, into the vacuum chamber at a location adjacent to the deposition region; generating a charged particle beam with the charged particle beam column and focusing the particle beam within the deposition region of the sample; and scanning the focused particle beam across the deposition region of the sample to activate molecules of the deposition gas that have adhered to the sample surface in the deposition region and deposit material on the sample within the deposition region, wherein, the elongated gas conduit comprises: a first gas conduit segment configured to be coupled with a gas reservoir; a second gas conduit segment fluidly coupled to the first gas conduit segment and defining a downward curve of the elongated gas conduit; a third gas conduit segment defining an upward curve of the elongated gas conduit that extends to a sealed end and is disposed in a mirrored relationship with at least a portion of the second gas conduit; and a central gas conduit segment coupled between the second and third gas conduit segments, the central gas conduit segment having a first aperture formed in an upper surface of the central gas conduit and a second aperture, larger than the first aperture, formed in a lower surface of the central gas conduit directly across from the first aperture, wherein the elongated gas conduit has an inner diameter along a portion of its length that includes at least the second, third and central gas conduit segments and wherein the central gas conduit segment includes a substantially horizontal portion that extends on each side of the first and second apertures for a distance that is at least twice the inner diameter of the gas conduit. ### Claim 15 (depends on 14) The method of claim 14 wherein the charged particle beam column is a focused ion beam column and the charged particle beam is a focused ion beam. ### Claim 16 (depends on 14) The method of claim 14 wherein the second aperture is has a diameter that is at least twice as large as a diameter of the first aperture. ### Claim 17 (depends on 14) The method of claim 14 wherein the substantially horizontal portion of the central gas conduit extends on each side of the first and second apertures for a distance that is at least three times the inner diameter of the gas conduit. ### Claim 18 (depends on 14) The method of claim 14 wherein an inner diameter of the elongated gas conduit is substantially constant throughout an entire length of the elongated gas conduit. ### Claim 19 (depends on 14) The method of claim 14 wherein the inner diameter of the elongated gas conduit is between 1500 and 300 microns. ### Claim 20 (depends on 14) The method of claim 14 wherein the sample comprises a semiconductor wafer.