Ingot growth apparatus
AssigneesHanwha Solutions Corporation, Hanwha Corporation
InventorsYoung Min LEE, Kyung Seok LEE, Jin Sung PARK, Dong Woo BAE
Life of this patent
Estimating the term…
Abstract
An ingot growth apparatus is disclosed. The ingot growth apparatus according to an embodiment of the present invention may comprise: a growth furnace having a main crucible which is disposed inside the growth furnace and in which molten silicon is held in order to grow an ingot; a susceptor formed to surround the outer surface of the main crucible and heating the main crucible; a heater formed to surround the outer surface of the susceptor and including a coil which is supplied with power to generate a magnetic field and heats the susceptor by electromagnetic induction from the magnetic field; and a heat insulation member disposed between the coil and the susceptor.
Claims12
An apparatus for growing an ingot, comprising:
- a growth furnace having a main crucible which is disposed inside the growth furnace and in which molten silicon is held in order to grow an ingot;
- a susceptor which is formed to surround the outer surface of the main crucible and heats the main crucible;
- a heater which is formed to surround the outer surface of the susceptor and includes a coil which is supplied with power to generate a magnetic field and heats the susceptor by electromagnetic induction from the magnetic field;
- and
- a heat insulation member which is disposed between the coil and the susceptor.
Dependencies are inferred from the claim text.