Methods of manufacturing semiconductor devices semiconductor devices

A method of forming a semiconductor device, comprising:

• providing a CZ semiconductor substrate comprising:
• an oxygen concentration less than about 26 parts per million atoms (ppma);
• a radial resistivity variation less than about 3.5%;
• and
• a substrate upper side,
• first annealing the CZ semiconductor substrate at a first temperature in an inert environment for a first time;
• and
• second annealing the CZ semiconductor substrate at a second temperature in a thermal oxidation environment for a second time.

A semiconductor device, comprising:

• a body of semiconductor material comprising:
• a CZ silicon material;
• an oxygen concentration less than about 26 parts per million atoms (ppma);
• a first conductivity type;
• an upper side;
• a lower side opposite to the upper side;
• and
• a region extending inward from the upper side comprising a crystal originated particle (COP) surface concentration less than about 1 defect/cm2 for COP defects greater than 0.06 microns in size;
• a first doped region of a second conductivity type in the region proximate to the upper side;
• an insulated gate electrode proximate to the upper side;
• and
• a second doped region of the first conductivity type in the first doped region proximate to the insulated gate electrode.