Memory controller and method for bit flipping of low-density parity-check codes
AssigneeSilicon Motion, Inc.
InventorShiuan-Hao KUO
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AssigneeSilicon Motion, Inc.
InventorShiuan-Hao KUO
Estimating the term…
A memory controller for use in a data storage device is provided. The memory controller includes a variable-node circuit and a check-node circuit. The check-node circuit obtains a codeword difference from the variable-node circuit, and calculates a syndrome according to the codeword difference. The variable-node circuit includes a threshold-tracking circuit which is configured to track a threshold used by the variable-node circuit during a low-density parity check (LDPC) decoding process to determine whether the variable-node circuit has entered a trapping status. In response to determining that the variable-node circuit has entered the trapping status during the LDPC decoding process, the variable-node circuit switches a bit-flipping algorithm used by the variable-node circuit during the LDPC decoding process from a first flipping strategy to a post-processing flipping strategy to bring the variable-node circuit out of the trapping status. The first flipping strategy is different from the post-processing flipping strategy.
A memory controller, for use in a data storage device, the memory controller comprising:
A method for bit flipping of low-density parity check (LDPC) codes, for use in a memory controller of a data storage device, wherein the memory controller comprises a variable-node circuit and a check-node circuit, the method comprising:
Dependencies are inferred from the claim text.