Electron beam lithography with dynamic fin overlay correction
AssigneeInternational Business Machines Corporation
InventorsSimon DAWES, Ernst Kratschmer
Life of this patent
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Abstract
An electron beam lithography (Ebeam) method for a wafer having alignment and device layers with a design alignment. The Ebeam method includes executing an Ebeam scan of predefined length and resolution based on the design alignment over a pattern edge of the device layer, generating a signal from reflections of the Ebeam scan off the pattern edge, determining an offset of the device layer relative to the alignment layer from a comparison of the signal and the design alignment and applying the offset to the design alignment to obtain an actual measurement of Ebeam alignment.
Claims6
A system to execute electron beam lithography (Ebeam), comprising:
- an Ebeam scanner to execute an Ebeam scan of a wafer;
- and
- a controller to execute a method comprising:
- moving the wafer into in a pattern edge position;
- controlling the Ebeam scanner to execute an Ebeam scan of predefined length and resolution based on a design alignment of an alignment layer and a device layer of the wafer over a pattern edge of the device layer;
- generating a signal from reflections of the Ebeam scan off the pattern edge;
- determining an offset of the device layer relative to the alignment layer from a comparison of the signal and the design alignment;
- and
- applying the offset to the design alignment to obtain an actual measurement of Ebeam alignment.
Dependencies are inferred from the claim text.