Raw material for chemical deposition containing organoruthenium compound, and chemical deposition method for ruthenium thin film or ruthenium compound thin film

A chemical deposition method for a ruthenium thin film or a ruthenium compound thin film, comprising heating a raw material for chemical deposition to obtain a raw material gas, and heating the raw material gas while introducing to a substrate surface,

• wherein the method comprises:
• using a raw material for chemical deposition containing an organoruthenium compound represented by the following formula 3 as the raw material for chemical deposition;
• and
• adding, before or during the heating of the raw material for chemical deposition, β-diketone that is represented by the following formula 4 and is the same as a ligand of the organoruthenium compound,
• wherein substituents R1 and R2 are each hydrogen, or a linear or branched alkyl group;
• and
• wherein substituents R1 and R2 are each hydrogen, or a linear or branched alkyl group.