Photomask processing apparatus and method of processing photomask

A photomask processing method comprising:

• preparing a photomask comprising a first surface provided with a plurality of patterns;
• determining a target correction region comprising at least one target correction pattern having a dimension greater than a predetermined target range, with respect to the photomask;
• supplying an etchant to the first surface of the photomask;
• and
• correcting a dimension of the at least one target correction pattern by irradiating light to the target correction region of the photomask,
• wherein the correcting of the dimension of the at least one target correction pattern comprises:
• preparing a digital micromirror device (DMD) comprising a plurality of mirror blocks each configured to be switched between an on state and an off state, each of the plurality of mirror blocks being further configured to, in the on state, reflect the light toward the first surface of the photomask and, in the off state, reflect the light toward outside of the first surface of the photomask;
• switching, to the on state, mirror blocks corresponding to the target correction region among the plurality of mirror blocks and switching, to the off state, mirror blocks corresponding to a non-correction region among the plurality of mirror blocks, the non-correction region being a region other than the target correction region on the first surface of the photomask;
• and
• providing the light to the DMD and etching the at least one target correction pattern by using the light reflected from the DMD.

A photomask processing method comprising:

• preparing a mask blank comprising a mask substrate, a reflective multi-layer film located on the mask substrate and configured to reflect extreme ultraviolet (EUV) light, and an absorbing layer located on the reflective multi-layer film;
• etching the absorbing layer to provide a photomask comprising a first surface provided with a plurality of patterns;
• detecting a target correction region comprising at least one target correction pattern among the plurality of patterns, the at least one target correction pattern being a pattern having a greater width than a deviation of a critical dimension of each of the plurality of patterns;
• supplying an etchant to the first surface of the photomask;
• and
• correcting, in a state in which the etchant is supplied, a critical dimension of the at least one target correction pattern by irradiating light to the target correction region,
• wherein the correcting of the critical dimension of the at least one target correction pattern comprises:
• preparing a digital micromirror device (DMD) comprising a plurality of mirror blocks each configured to be switched between an on state and an off state, each of the plurality of mirror blocks being further configured to, in the on state, reflect the light toward the first surface of the photomask and, in the off state, reflect the light toward outside of the first surface of the photomask;
• switching, to the on state, mirror blocks corresponding to the target correction region among the plurality of mirror blocks and switching, to the off state, mirror blocks corresponding to a non-correction region among the plurality of mirror blocks, the non-correction region being a region other than the target correction region on the first surface of the photomask;
• and
• providing the light to the DMD and etching the at least one target correction pattern by using the light reflected from the DMD.