Back to results
US 2024/0047504 A1Published application
Solid-state imaging device, drive method thereof and electronic apparatus
AssigneeSony Group Corporation
InventorsTaiichiro WATANABE, Akihiro YAMADA, Hideo KIDO, Hiromasa SAITO, Keiji MABUCHI, Yuko OHGISHI
Life of this patent
Estimating the term…
Abstract
A solid-state imaging device includes: plural photodiodes formed in different depths in a unit pixel area of a substrate; a plural vertical transistors formed in the depth direction from one face side of the substrate so that gate portions for reading signal charges obtained by photelectric conversion in the plural photodiodes are formed in depths corresponding to the respective photodiodes.
Claims21
1-13. (canceled)
A light detecting device, comprising:
- a semiconductor substrate;
- a photoelectric conversion region disposed in the semiconductor substrate;
- a first vertical gate electrode disposed in the semiconductor substrate,
- wherein at least a part of the first vertical gate electrode overlapping the photoelectric conversion region in a plan view;
- a second vertical gate electrode disposed in the semiconductor substrate,
- wherein at least a part of the second vertical gate electrode overlapping the photoelectric conversion region in the plan view;
- and
- a floating diffusion region disposed in the semiconductor substrate,
- electrically connected to the transfer transistor,
- wherein the first vertical gate electrode and the second vertical gate electrode are configured to transfer a charge generated in the photoelectric conversion region to the floating diffusion region.
7 more elements
An electronic apparatus, comprising:
- an optical lens system;
- a light detecting device, comprising:
- a semiconductor substrate;
- a photoelectric conversion region disposed in the semiconductor substrate;
- a first vertical gate electrode disposed in the semiconductor substrate,
- wherein at least a part of the first vertical gate electrode overlapping the photoelectric conversion region in a plan view;
- a second vertical gate electrode disposed in the semiconductor substrate,
- wherein at least a part of the second vertical gate electrode overlapping the photoelectric conversion region in the plan view;
- and
- a floating diffusion region disposed in the semiconductor substrate,
- electrically connected to the transfer transistor,
- wherein the first vertical gate electrode and the second vertical gate electrode are configured to transfer a charge generated in the photoelectric conversion region to the floating diffusion region;
- and
- a signal processing device which processes output signals from the light detecting device.
11 more elements
Dependencies are inferred from the claim text.