Analog-cells-boundary region with buried power grid segment, semiconductor device including same and method of manufacturing same

A semiconductor device comprising:

• first and second active regions (ARs) having long axes extending in a first direction and being included correspondingly in first and second analog cell regions that abut relative to a second direction perpendicular to the first direction, a region where the first and second analog cell regions abut (analog-cell-boundary (ACB) region) extending from about a top boundary of the first AR to about a bottom boundary of the second AR;
• pairs of gate segments, each pair including collinear first and second gate segments correspondingly over the first and second ARs, the first and second gate segments extending in the second direction;
• first metal-to-source/drain region (MD) contact structures correspondingly over the first and second ARs and interspersed with the pairs of gate segments, at least some of the first MD contact structures being gap-spanning MD contact structures that extend continuously across a gap between the first and second ARs to overlie each of the first and second ARs;
• a feedthrough via (FTV) extending in the first direction, being in the gap and under the MD contact structures, a midline of the FTV relative to the second direction (Y-midline) being at or proximal to a location where the first and second analog cell regions abut, the Y-midline of the FTV being at or proximal to a middle of the ACB region;
• and
• a PG segment in a first buried metallization (BM_1st) layer (PGBM_1st segment) under the FTV.

A method of forming a semiconductor device, the method comprising:

• forming first and second active regions (ARs) in a substrate, the first and second ARs having long axes extending in a first direction and being included correspondingly in first and second analog cell regions that abut relative to a second direction perpendicular to the first direction, a region where the first and second analog cell regions abut (analog-cell-boundary (ACB) region) extending from about a top boundary of the first AR to about a bottom boundary of the second AR;
• forming pairs of gate segments, each pair including collinear first and second gate segments correspondingly over the first and second ARs, the first and second gate segments extending in the second direction;
• forming metal-to-source/drain region (MD) contact structures correspondingly over the first and second ARs and interspersed with the pairs of gate segments resulting in a first workpiece, the forming MD contact structures including forming at least some of the MD contact structures as gap-spanning MD contact structures that extend continuously across a gap between the first and second ARs to overlie each of the first and second ARs;
• forming via-to-PGBM_1st-segment contact structures (VBs) correspondingly under the first or second ARs, the VBs having long axes extending in the second direction, the long axis of each VB and a short axis of each of the first and second ARs having about a same length;
• and
• forming a PG segment in a first buried metallization (BM_1st) layer (PGBM_1st segment) under the VBs, the PGBM_1st segment underlapping a majority of each of the VBs, a midline of the PGBM_1st segment relative to the second direction (Y-midline) being at or proximal to a location where the first and second analog cell regions abut, the Y-midline of the PGBM_1st segment being at or proximal to a middle of the ACB region.