Substrate bonding method and substrate bonding system
AssigneesTadatomo SUGA, Bondtech Co., Ltd.
InventorsAkira YAMAUCHI, Tadatomo SUGA
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Abstract
A substrate bonding method for bonding two substrates includes an activation treatment step of, by subjecting at least one of bonding surfaces to be bonded to each other of respective ones of the two substrates to at least one of reactive ion etching using nitrogen gas and irradiation of nitrogen radicals, activating the bonding surface, a gas exposure step of, after the activation treatment step, exposing the bonding surfaces of the two substrates to gas containing water within a preset standard time, and a bonding step of bonding the two substrates that have the bonding surfaces activated in the activation treatment step.
Claims27
A substrate bonding method for bonding two substrates, the method comprising:
- an activation treatment step of, by subjecting at least one of bonding surfaces to be bonded to each other of respective ones of the two substrates to at least one of etching treatment using nitrogen gas and irradiation of nitrogen radicals, activating the bonding surface;
- a gas exposure step of, after the activation treatment step, exposing the bonding surfaces of the two substrates to gas containing water within a preset standard time;
- and
- a bonding step of bonding the two substrates that have the bonding surfaces activated in the activation treatment step.
A substrate bonding method for bonding two substrates, the method comprising:
- an activation treatment step of activating bonding surfaces to be bonded to each other of respective ones of the two substrates;
- a bonding step of bonding the two substrates that have the bonding surfaces activated in the activation treatment step;
- and
- a transportation step of, during a period after the activation treatment step until the bonding step is performed, transporting the two substrates while maintaining gas pressure greater than 1 Pa and less than 10000 Pa,
- wherein, in the bonding step, the substrate bonding method bonds the two substrates while gas pressure is greater than 1 Pa and less than 10000 Pa.
A substrate bonding method for bonding two substrates, the method comprising:
- an activation treatment step of, by subjecting at least one of bonding surfaces to be bonded to each other of respective ones of the two substrates to at least one of etching treatment using nitrogen gas and irradiation of nitrogen radicals, forming N groups on the bonding surface;
- a gas exposure step of, after the activation treatment step, by exposing the bonding surfaces of the two substrates to gas containing water, replacing N groups formed on the bonding surfaces by OH groups;
- and
- a bonding step of bonding the two substrates while OH groups exist on the bonding surfaces.
A substrate bonding system for bonding two substrates, comprising:
- an activation treatment device to perform activation treatment to, by subjecting at least one of bonding surfaces to be bonded to each other of respective ones of the two substrates to at least one of etching treatment using nitrogen gas and irradiation of nitrogen radicals, activate the bonding surface and subsequently expose the bonding surfaces of the two substrates to gas containing water within a preset standard time;
- and
- a substrate bonding device to bond the two substrates that have the bonding surfaces activated by the activation treatment device.
A substrate bonding system for bonding two substrates, comprising:
- an activation treatment device to perform activation treatment to, by subjecting at least one of bonding surfaces to be bonded to each other of respective ones of the two substrates to at least one of etching treatment using nitrogen gas and irradiation of nitrogen radicals, activate the bonding surface;
- a substrate bonding device to bond the two substrates that have the bonding surfaces activated by the activation treatment device;
- and
- a transportation device to, after the activation treatment by the activation treatment device, transport the two substrates from the activation treatment device to the substrate bonding device in such a way as to expose the bonding surfaces of the two substrates to gas containing water within a preset standard time.
Dependencies are inferred from the claim text.