Dual gate mosfet devices and pre-charging techniques for dc link capacitors
AssigneeInfineon Technologies AG
InventorsDirk Ahlers, Manuel Wilke, Benjamin Schmidt, Jonas Groenvall
Life of this patent
Estimating the term…
Loading patent…
AssigneeInfineon Technologies AG
InventorsDirk Ahlers, Manuel Wilke, Benjamin Schmidt, Jonas Groenvall
Estimating the term…
This disclosure is directed to a dual gate metal oxide semiconductor field effect transistor (MOSFET) device formed in a semiconductor material, as well as circuits and techniques for using the dual gate MOSFET device. In some examples, the dual gate MOSFET device may comprise a first MOSFET formed in the semiconductor material, and a second MOSFET formed in the semiconductor material, wherein the first MOSFET and the second MOSFET are arranged in parallel in the semiconductor material, wherein the first MOSFET and the second MOSFET include a common drain node and a common source node, and wherein the first MOSFET and the second MOSFET define different transfer characteristics.
A device comprising:
(canceled)
(canceled)
(canceled)
(canceled)
A circuit comprising:
(canceled)
(canceled)
A method comprising:
(canceled)
Dependencies are inferred from the claim text.