US 2024/0006540 A1 · DEVICE, METHOD AND SYSTEM TO PROVIDE EPITAXIAL STRUCTURES OPPOSITE SIDES OF A SEPARATION LAYER BETWEEN CHANNEL STACKS

Abstract

Techniques and mechanisms for providing epitaxial structures of an integrated circuit (IC). In an embodiment, an IC comprises a separation layer, and first and second channel stack structures at opposite surfaces of the separation layer. A first source or drain (SD) structure extends to the first channel stack structure, and a second SD structure extends to the second channel stack structure. A hole extends through the separation layer, wherein the first and second SD structures are formed concurrently by a deposition of an epitaxial (epi) material from one side of the hole. An insulator material of the separation layer facilitates separation of the first and second SD structures from each other during the epi deposition. In another embodiment, respective crystal orientations in the first and second SD structures each face the same direction along a vertical dimension which is orthogonal to the surfaces of the separation layer.

Claims20

Dependent claims

An integrated circuit (IC) comprising:

a separation layer comprising a first surface and a second surface which is opposite the first surface, wherein the separation layer forms a first hole structure that extends to each of the first surface and the second surface;
a first channel stack structure at the first surface, the first channel stack structure comprising a first plurality of channel structures;
a first source or drain (SD) structure comprising a first portion of a first epitaxial material in contact with each of the first plurality of channel structures;
a second channel stack structure at the second surface, the second channel stack structure comprising a second plurality of channel structures;
and
a second SD structure comprising a second portion of the first epitaxial material in contact with each of the second plurality of channel structures;
wherein the first hole structure extends into a first region which is between the first SD structure and the second SD structure.

4 more elements

A system comprising:

a substrate;
a power supply;
and
an integrated circuit (IC) die attached to the substrate and coupled to the power supply, the IC die comprising:
a separation layer comprising a first surface and a second surface which is opposite the first surface, wherein the separation layer forms a first hole structure that extends to each of the first surface and the second surface;
a first channel stack structure at the first surface, the first channel stack structure comprising a first plurality of channel structures;
a first source or drain (SD) structure comprising a first portion of a first epitaxial material in contact with each of the first plurality of channel structures;
a second channel stack structure at the second surface, the second channel stack structure comprising a second plurality of channel structures;
and
a second SD structure comprising a second portion of the first epitaxial material in contact with each of the second plurality of channel structures;
wherein the first hole structure extends into a first region which is between the first SD structure and the second SD structure.

8 more elements

A method for fabricating an integrated circuit (IC), the method comprising:

forming a first one or more channel structures which are over a first surface of a separation layer;
forming a second one or more channel structures which are under a second surface of the separation layer;
forming a first hole structure that extends to each of the first surface and the second surface;
and
after forming the first hole structure, depositing a first portion of first epitaxial material into the first hole structure to concurrently form a first SD structure at a first side of the first one or more channel structures, and a second SD structure at a second side of the second one or more channel structures;
wherein the first one or more channel structures each extend to the first SD structure;
wherein the second one or more channel structures each extend to the second SD structure;
and
wherein the first hole structure extends into a first region which is between the first SD structure and the second SD structure.

6 more elements

Dependencies are inferred from the claim text.

Device, method and system to provide epitaxial structures opposite sides of a separation layer between channel stacks

Life of this patent

Device, method and system to provide epitaxial structures opposite sides of a separation layer between channel stacks

Life of this patent

Abstract

Claims20