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US 2024/0006509 A1Published application
Thin film structure and semiconductor device including the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJinseong HEO, Taehwan MOON, Seunggeol NAM, Sanghyun JO
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Abstract
A thin film structure including ferroelectrics and anti-ferroelectrics and a semiconductor device including the same are provided. The thin film structure includes a first anti-ferroelectric layer comprising anti-ferroelectrics, a second anti-ferroelectric layer disposed apart from the first anti-ferroelectric layer and including anti-ferroelectrics, and a ferroelectric layer between the first anti-ferroelectric layer and the second anti-ferroelectric layer and including ferroelectrics.
Claims20
A semiconductor device comprising:
- a substrate;
- a gate electrode on the substrate;
- and
- a thin film structure between the substrate and the gate electrode,
- wherein the thin film structure comprises
- a first anti-ferroelectric layer parallel to the substrate;
- a second anti-ferroelectric layer parallel to the substrate, and
- a ferroelectric layer parallel to the substrate, the ferroelectric layer between the first anti-ferroelectric layer and the second anti-ferroelectric layer, and
- wherein a hysteresis window of the semiconductor device is 10 mV or less at 1 V operating voltage in a voltage-to-current curve.
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A semiconductor device comprising:
- a substrate;
- a gate electrode on the substrate;
- and
- a crystalline metal oxide layer between the substrate and the gate electrode, the crystalline metal oxide layer including at least of hafnium oxide (HfO2), zirconium oxide (ZrO2), and hafnium-zirconium oxide (HfxZr1-xO2, 0<x<1),
- wherein the crystalline metal oxide layer has a first surface layer portion, a central portion, and a second surface layer portion sequentially stacked in a thickness direction,
- wherein a hafnium element content of the central portion is greater than a hafnium element content of one or more of the first surface layer portion and the second surface layer portion, and
- wherein a hysteresis window of the semiconductor device is 10 mV or less at 1 V operating voltage in a voltage-to-current curve.
4 more elements
Dependencies are inferred from the claim text.