Field effect transistors with 2-dimensional electron gas channels

A semiconductor structure comprising:

• a channel region comprising at least one channel of at least two III-V semiconductor material layers having a two dimensional electron gas regions at an interface of the at least two III-V semiconductor material layers, wherein the at least two III-V semiconductor material layers include
• a core semiconductor layer and an epitaxial cladding layer that is present on the exterior faces of the core semiconductor layer;
• a gate all around (GAA) geometry gate structure present on the channel region;
• and
• source and drain regions on opposing sides of the channel region.

A method of forming a semiconductor structure comprising:

• forming a stack including a repeating sequence including a sacrificial III-V semiconductor material and at least two channel III-V semiconductor materials that form a two dimensional electron gas region at an interface of the at least two channel III-V semiconductor materials;
• forming a replacement gate structure on a channel region of a fin structure including the stack including the repeating sequence including a sacrificial III-V semiconductor material and at least two channel III-V semiconductor materials;
• forming III-V source and drain regions on source and drain portions of the fin structure at opposing ends of the channel region;
• removing the sacrificial III-V semiconductor material, and
• replacing the replacement gate structure with a functional gate structure having a gate all around (GAA) geometry on the at least two channel III-V semiconductor materials having the two dimensional electron gas region at the interface of the at least two channel III-V semiconductor materials.