Voltage contrast structure for trench connectors
AssigneeIntel Corporation
InventorsXiao WEN, Dipto THAKURTA, Sairam SUBRAMANIAN, Manish SHARMA
Life of this patent
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Abstract
Embodiments described herein may be related to apparatuses, processes, systems, and/or techniques for electrically coupling components of a transistor structure together in order to perform a voltage contrast test to determine opens and shorts within the transistor structure. In embodiments, trench contacts (TCN) within a transistor structure may be electrically coupled together with an electrical connection that is electrically isolated from a power rail. In other embodiments, TCN may be electrically coupled using P-type epitaxial layers on a P-type substrate. Other embodiments may be described and/or claimed.
Claims25
A voltage contrast structure comprising:
- a substrate layer that includes silicon;
- a nano-ribbon above a side of the substrate, wherein the nano-ribbon is within a first epitaxial layer and within a second epitaxial layer, wherein the first epitaxial layer and the second epitaxial layer are physically coupled with the substrate layer;
- a first trench connector on the first epitaxial layer;
- a second trench connector on the second epitaxial layer;
- and
- an electrical connector that is electrically coupled with the first trench connector and the second trench connector.
A voltage contrast structure comprising:
- a substrate layer that includes silicon, wherein the substrate layer is a P-type substrate;
- a nano-ribbon above a side of the substrate, wherein the nano-ribbon is within a first epitaxial layer and within a second epitaxial layer, wherein the first epitaxial layer and the second epitaxial layer are P-type epitaxial layers, and wherein the first epitaxial layer and the second epitaxial layer are physically and electrically coupled with the substrate layer;
- a first trench connector on the first epitaxial layer;
- a second trench connector on the second epitaxial layer;
- and
- wherein the first trench connector is electrically coupled with the second trench connector through the first epitaxial layer, the substrate layer, and the second epitaxial layer.
A method comprising:
- providing a substrate;
- providing a first epitaxial layer on the substrate;
- providing a second epitaxial layer on the substrate, wherein one or more nano-ribbons extend through the first epitaxial layer and the second epitaxial layer parallel to a side of the substrate;
- forming a first trench contact on the first epitaxial layer;
- forming a second trench contact on the second epitaxial layer;
- and
- electrically coupling the first trench contact and the second trench contact using an electrical connector, wherein the electrical connector is coupled with a ground.
Dependencies are inferred from the claim text.