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AssigneeIntel Corporation
InventorsAshish Verma PENUMATCHA, Kevin P. O'BRIEN, Kirby MAXEY, Carl H. NAYLOR, Chelsey DOROW, Uygar E. AVCI, Matthew V. METZ, Sudarat LEE, Chia-Ching LIN, Sean T. MA
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Embodiments disclosed herein include transistors and methods of forming transistors. In an embodiment, the transistor comprises a channel with a first end and a second end opposite from the first end, a first spacer around the first end of the channel, a second spacer around the second end of the channel, and a gate stack over the channel, where the gate stack is between the first spacer and the second spacer. In an embodiment, the transistor may further comprise a first extension contacting the first end of the channel; and a second extension contacting the first end of the channel. In an embodiment, the transistor further comprises conductive layers over the first extension and the second extension outside of the first spacer and the second spacer.
A transistor, comprising:
A transistor device, comprising:
An electronic system, comprising:
Dependencies are inferred from the claim text.