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US 2024/0006402 A1Published application
Semiconductor device
AssigneeRohm Co., Ltd.
InventorMasashi HAYASHIGUCHI
Life of this patent
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Abstract
A semiconductor device includes a first MOSFET and a first IGBT. A drain of the first MOSFET and a collector of the first IGBT are electrically connected to each other. A source of the first MOSFET and an emitter of the first IGBT are electrically connected to each other. An element withstand voltage of the first MOSFET is larger than an element withstand voltage of the first IGBT.
Claims18
A semiconductor device comprising:
- a first MOSFET;
- and
- a first IGBT,
- wherein a drain of the first MOSFET and a collector of the first IGBT are electrically connected to each other,
- a source of the first MOSFET and an emitter of the first IGBT are electrically connected to each other, and
- an element withstand voltage of the first MOSFET is larger than an element withstand voltage of the first IGBT.
3 more elements
Dependencies are inferred from the claim text.