Substrate processing apparatus and substrate processing method

A substrate processing apparatus comprising:

• a process chamber providing an internal space where a substrate is processed;
• a spin chuck serving as a lower electrode, supporting the substrate in the internal space of the process chamber, and rotating the supported substrate;
• a plasma generation unit mounted in an upper portion of the process chamber to face the spin chuck, comprising a discharge space where an upper electrode is provided, generating plasma by using a process gas supplied from outside, and treating a surface of the substrate with the plasma;
• a process gas supply unit supplying the process gas to the plasma generation unit;
• and
• a controller for controlling a flow rate of the process gas supplied from the process gas supply unit to the plasma generation unit,
• wherein the plasma generation unit linearly extends in a diameter direction of the spin chuck provided in a circular shape, linearly ejects the plasma onto the substrate rotated by the spin chuck, controls a density of the plasma to gradually increase from a portion corresponding to a central portion of the substrate to a portion corresponding to an edge portion of the substrate in consideration of an linear velocity of the substrate rotated by the spin chuck, and comprises:
• a reactor body comprising the discharge space and provided in a hollow bar shape linearly extending in the diameter direction of the circular spin chuck;
• and
• the upper electrode mounted in the discharge space of the reactor body and provided in a rod shape linearly extending in the diameter direction of the spin chuck, and
• wherein the reactor body comprises a nozzle provided in a bottom surface of the reactor body in a slit shape along the diameter direction to linearly eject the plasma generated in the discharge space onto a surface of the substrate supported by the spin chuck.