Operation method of memory device including memory block connected to wordlines

An operation method of a memory device which includes a memory block connected with wordlines, a string selection line and a ground selection line, the method comprising:

• receiving a command from a memory controller;
• activating a first block selection signal controlling first pass transistors configured to connect the wordlines, connected with the memory block, with driving lines and controlling the wordlines such that a first operation corresponding to the command is performed;
• pre-charging channels of the memory block with a first voltage;
• setting the wordlines connected with the memory block with a recovery voltage and setting the string selection line and the ground selection line with a ground voltage;
• and
• deactivating the first block selection signal.

An operation method of a memory device which includes a memory block connected with wordlines, a string selection line and a ground selection line, the method comprising:

• receiving a read command from a memory controller;
• performing a wordline setup operation in response to the read command by applying a non-selection read voltage to unselected wordlines among the wordlines, applying a pass voltage to the string selection line, and applying the pass voltage to the ground selection line;
• performing a sensing operation by applying at least one read voltage to a selected wordline among the wordlines;
• and
• performing a mode recovery operation such that the wordlines are set with a recovery voltage and the string selection line and the ground selection line are set with a ground voltage, wherein:
• the mode recovery operation includes an operation of pre-charging channels of the memory block through bitlines or a common source line connected with the memory block,
• a first block selection signal corresponding to the memory block is activated during the wordline setup operation, the sensing operation, and the mode recovery operation, and
• the first block selection signal is deactivated after the mode recovery operation is completed.