US 2023/0422641 A1 · CMOS-COMPATIBLE RRAM DEVICES

Abstract

An apparatus including a CMOS-compatible resistive random-access memory (RRAM) devices is provided. The apparatus includes a transistor; one or more first interconnect layers fabricated on the transistor; an RRAM device fabricated on the one or more first interconnect layers; and one or more second interconnect layers fabricated on the RRAM device. The RRAM device includes: a bottom electrode; a switching oxide layer including a transition metal oxide; a top electrode; and one or more interface layer including a material that is more chemically stable than the transition metal oxide. In some embodiments, one or more diffusion barriers and/or adhesion layers are fabricated between the RRAM device and the first interconnect layers and/or between the RRAM device and the second interconnect layers.

Claims20

Dependent claims

An apparatus, comprising:

one or more first interconnect layers fabricated on a transistor;
an RRAM device fabricated on the one or more first interconnect layers, wherein the RRAM device comprises:
a bottom electrode connected to a drain region of the transistor via the one or more first interconnect layers, wherein the bottom electrode is fabricated on a metal pad or a metal via of a top interconnect layer of the one or more first interconnect layers;
a switching oxide layer comprising at least one transition metal oxide;
a top electrode;
and
a first interface layer fabricated between the top electrode and the switching oxide layer, wherein the first interface layer comprises a first material that is more chemically stable than the at least one transition metal oxide;
and
one or more second interconnect layers fabricated on the RRAM device.

6 more elements

Dependencies are inferred from the claim text.

Cmos-compatible rram devices

Life of this patent

Cmos-compatible rram devices

Life of this patent

Abstract

Claims20