Method of forming a thin film
AssigneeMicrosoft Technology Licensing, LLC
InventorsKeita Otani, Peter Krogstrup Jeppesen
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Abstract
A method of forming a thin film of material on a surface of a substrate, the substrate comprising a semiconductor, comprises: depositing a thin film of metal on the surface of the substrate, wherein the deposition is performed in an ultra-high vacuum, and wherein the substrate is at a temperature of less than or equal to 260 K during the deposition. Cooling the substrate during deposition of the thin film of metal may allow for an atomically flat and very uniform thin film to be obtained. Also provided is a device obtainable by the method.
Claims20
A method of forming a thin film of material on a surface of a substrate, the substrate comprising a semiconductor, which method comprises:
- depositing a thin film of metal on the surface of the substrate;
- wherein the deposition is performed in an ultra-high vacuum;
- and
- wherein the substrate is at a temperature of less than or equal to 260 K during the deposition.
A device, comprising:
- a plurality of thin films of metal;
- and
- a plurality of layers of an oxide of the metal;
- wherein the thin films and the layers are arranged in an alternating stack.
Dependencies are inferred from the claim text.