Semiconductor device and method of manufacturing the same
AssigneeKioxia Corporation
InventorsTatsuki KIKUCHI, Keiko SAKUMA, Shosuke FUJII
Life of this patent
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Abstract
According to one embodiment, a semiconductor device includes a first insulating layer, a gate electrode layer provided on the first insulating layer, a second insulating layer provided on the gate electrode layer, an oxide semiconductor layer provided along the second insulating layer, the gate electrode layer and the first insulating layer, a gate insulating layer provided along the second insulating layer, the gate electrode layer and the first insulating layer, and surrounding a side surface of the oxide semiconductor layer, and a first hydrogen barrier film surrounding the oxide semiconductor layer and the gate insulating layer.
Claims16
A semiconductor device comprising:
- a first insulating layer;
- a gate electrode layer provided on the first insulating layer;
- a second insulating layer provided on the gate electrode layer;
- an oxide semiconductor layer provided along the second insulating layer, the gate electrode layer and the first insulating layer;
- a gate insulating layer provided along the second insulating layer, the gate electrode layer and the first insulating layer, and surrounding a side surface of the oxide semiconductor layer;
- and
- a first hydrogen barrier film surrounding the oxide semiconductor layer and the gate insulating layer, wherein the first insulating layer, the gate electrode layer and the second insulating layer are interposed between the first hydrogen barrier film and a layer including the oxide semiconductor layer and the gate insulating layer.
A method of manufacturing a semiconductor device, comprising:
- forming a first insulating layer;
- forming a gate electrode layer and a second insulating layer on the first insulating layer in that order;
- processing the first insulating layer, the gate electrode layer and the second insulating layer, and thereby forming a stacked body surrounded by a trench and including the first insulating layer, the gate electrode layer and the second insulating layer;
- forming a first hydrogen barrier film on a side surface of the stacked body;
- filling the trench with a third insulating layer;
- forming a through hole which penetrates the stacked body by processing the stacked body;
- forming a gate insulating layer on a sidewall of the through hole;
- and
- forming an oxide semiconductor layer in the through hole.
Dependencies are inferred from the claim text.