Micro light-emitting device, micro light-emitting diode, and method for manufacturing micro light-emitting device

A micro light-emitting diode, comprising:

• a semiconductor epitaxial structure including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between said first semiconductor layer and said second semiconductor layer, said semiconductor epitaxial structure having a first mesa surface defined by said first semiconductor layer that is exposed from a recess of said semiconductor epitaxial structure, a second mesa surface defined by said second semiconductor layer, and a connecting wall disposed between and interconnecting said first mesa surface and said second mesa surface,
• a first contact electrode disposed on said first mesa surface and electrically connected to said first semiconductor layer,
• a second contact electrode disposed on said second mesa surface and electrically connected to said second semiconductor layer,
• a first bonding electrode disposed on and electrically connected to said first contact electrode;
• and
• a second bonding electrode disposed on and electrically connected to said second contact electrode,
• wherein said connecting wall cooperates with said first mesa surface to form a first included angle, where 105°≤θ1≤165°.

A method for manufacturing a micro light-emitting device, comprising steps of:

• forming a semiconductor epitaxial structure on a growth substrate, the semiconductor epitaxial structure including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer;
• removing a portion of the semiconductor epitaxial structure to expose the first semiconductor layer and to form a first mesa surface, a second mesa surface, and a connecting wall, the first mesa surface being defined by the exposed first semiconductor layer, the second mesa surface being defined by the second semiconductor layer, the connecting wall being disposed between and interconnecting the first mesa surface and the second mesa surface, and cooperating with the first mesa surface to form a first included angle, where 105°≤θ1≤165°;
• forming a first contact electrode and a second contact electrode on the first mesa surface and the second mesa surface, respectively, and forming a first bonding electrode and a second bonding electrode on the first contact electrode and the second contact electrode, respectively, so as to obtain a micro light-emitting diode;
• forming a sacrificial layer on the micro light-emitting diode;
• providing a base frame having an indented receiving space;
• bonding the micro light-emitting diode to the base frame with the sacrificial layer facing the base frame so that the micro light-emitting diode is disposed in the indented receiving space of the base frame;
• removing the growth substrate;
• and
• separating the micro light-emitting diode from the base frame by transfer printing and transferring the micro light-emitting diode onto a packaging substrate.