All-nitride-based epitaxial structure and light-emitting device

Abstract

The present disclosure includes an all-nitride-based epitaxial and chip structure and a light-emitting device. The epitaxial and chip structure includes an N-type semiconductor layer, a P-type semiconductor layer, an electroluminescent (EL) multiple quantum wells (MQWs) region, and a first photoluminescent (PL) multiple quantum wells (MQWs) region stacked on a main surface of a substrate. The EL MQWs region generates a first-color light by an EL method and the first-color light is further transmitted to the first PL MQWs region or/and the second PL MQWs region where the second-color light or/and the third-color light are generated by a PL method. The present disclosure provides an EL MQWs region to generate the first-color light, and also provides a first, a second or more PL MQWs regions to further convert the first-color light into the second, the third or more-color lights which allow RGB or multiple colors emission.

Dependencies are inferred from the claim text.