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US 2023/0420596 A1Published application
Photodetector with dual doped semiconductor material
AssigneeGlobalFoundries U.S. Inc.
InventorsJohn J. ELLIS-MONAGHAN, Rajendran KRISHNASAMY, Siva P. ADUSUMILLI, Ramsey HAZBUN
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Abstract
The present disclosure relates to semiconductor structures and, more particularly, to a photodetector and methods of manufacture. The structure includes: a photodetector; and a semiconductor material on the photodetector, the semiconductor material comprising a first dopant type, a second dopant type and intrinsic semiconductor material separating the first dopant type from the second dopant type.
Claims20
A structure comprising:
- a photodetector;
- and
- a semiconductor material on the photodetector, the semiconductor material comprising a first dopant type, a second dopant type and intrinsic semiconductor material separating the first dopant type from the second dopant type.
A structure comprising:
- a semiconductor substrate;
- an insulator material over the semiconductor substrate;
- a photodetector within a trench of the semiconductor substrate;
- a semiconductor material of a first dopant type on a first portion of the photodetector;
- a semiconductor material of a second dopant type on a second portion of the photodetector;
- and
- an intrinsic semiconductor material on a third portion of the photodetector.
4 more elements
A method comprising:
- forming a photodetector in a semiconductor substrate;
- and
- forming a semiconductor material on the photodetector, the semiconductor material comprising a first dopant type, a second dopant type and intrinsic semiconductor material separating the semiconductor material of the first dopant type from the semiconductor material of the second dopant type.
Dependencies are inferred from the claim text.