Optical device and method

A photo diode or a photodetector device comprising:

• a gallium and nitrogen containing substrate member having a backside surface and an upper surface;
• an N-type gallium and nitrogen containing material having a silicon dopant overlying the upper surface, the N-type gallium and nitrogen containing material being configured as a buffer material, the buffer material having a thickness ranging from about 0.5 micrometer to one and a half micrometer;
• a super lattice (SL) indium gallium nitrogen containing material overlying the N-type gallium and nitrogen containing material, the super lattice material comprising an indium gallium nitrogen containing material and a gallium and nitrogen containing material, the super lattice material having twenty-five to eighty indium gallium nitrogen containing material and the gallium and nitrogen containing material;
• a lower barrier (LB) indium gallium nitrogen containing material overlying the SL indium gallium nitrogen containing material, the LB material having an indium concentration ranging from zero to four percent, the LB material having a thickness ranging from 8 to 12 nanometers;
• a plurality of quantum well regions ranging from 30 to 50 quantum wells overlying the LB material, each of the quantum wells having an indium gallium nitride material having a thickness of 2.5 nanometers to 3.5 nanometers, and an indium concentration ranging from seven percent to 14 percent, and a gallium nitride material having a thickness of 1.5 nanometers to 2.5 nanometers, the plurality of quantum well regions being an undoped state;
• an upper barrier (UB 1) indium gallium nitrogen containing material overlying the plurality of quantum well regions, the indium gallium nitride having a concentration ranging from zero to four percent, and a thickness of 4 nanometers to 10 nanometers, the upper barrier (UB 1) indium gallium nitrogen containing material being in an undoped state;
• an upper barrier (UB 2) gallium nitrogen containing material overlying the upper barrier (UB 1) indium gallium nitrogen containing material, the upper barrier (UB 1) indium gallium nitrogen containing material comprising a magnesium dopant material having a concentration 8E19 atoms/cm3to 6E10 atoms/cm3, and a thickness of sixteen nanometers to twenty-four nanometers;
• a P-type gallium and nitrogen containing material overlying the (UB 2) gallium nitrogen containing material, the P-type material being a cap material;
• and
• a P-type contact comprising gallium and nitrogen material having a magnesium dopant material, the P-type contact being in electrical and physical contact with the P-type material.

A power converter device comprising:

• a laser device configured to emit electromagnetic energy as a laser beam;
• a fiber optical cable configured to receive the laser beam;
• and a photodiode device coupled to receive the laser beam and convert the laser beam into electrical energy, the photodiode device comprising:
• a gallium and nitrogen containing substrate member having a backside surface and an upper surface;
• an N-type gallium and nitrogen containing material having a silicon dopant overlying the upper surface, the N-type gallium and nitrogen containing material being configured as a buffer material, the buffer material having a thickness ranging from about 0.5 micrometer to one and a half micrometer;
• a super lattice (SL) indium gallium nitrogen containing material overlying the N-type gallium and nitrogen containing material, the super lattice material comprising an indium gallium nitrogen containing material and a gallium and nitrogen containing material, the super lattice material is a periodic structure having fifteen to eighty indium gallium nitrogen containing material and the gallium and nitrogen containing material;
• a lower barrier (LB) indium gallium nitrogen containing material overlying the SL indium gallium nitrogen containing material, the LB material having an indium concentration ranging from zero to four percent, the LB material having a thickness ranging from 6 to 14 nanometers;
• a plurality of quantum well regions ranging from 30 to 70 quantum wells overlying the LB material, each of the quantum wells having an indium gallium nitride material having a thickness of 2.0 nanometers to 4.0 nanometers, and an indium concentration ranging from ten percent to 14 percent, and a gallium nitride material having a thickness of 1.0 nanometers to 2.5 nanometers, the plurality of quantum well regions being an undoped state;
• an upper barrier (UB 1) material overlying the plurality of quantum well regions, the upper barrier (UB 1) material comprising a gallium and nitrogen containing material and/or an indium and gallium nitrogen containing material, the upper barrier material being in an undoped state;
• an upper barrier (UB 2) indium gallium nitrogen containing material overlying the upper barrier (UB 1) material, the upper barrier (UB 1) material comprising a magnesium dopant material having a concentration 8E19 atoms/cm3 to 6E20 atoms/cm3, and a thickness of sixteen nanometers to twenty-four nanometers;
• a P-type gallium and nitrogen containing material overlying the upper barrier (UB 2) material, the P-type material being a cap material;
• and
• a P-type contact comprising gallium and nitrogen material having a magnesium dopant material, the P-type contact being in electrical and physical contact with the P-type material.