Methods of forming uniformly doped deep implanted regions in silicon carbide and silicon carbide layers including uniformly doped implanted regions

A method of forming a buried implanted region in a silicon carbide semiconductor layer, comprising:

• implanting first dopant ions having a first conductivity type into the silicon carbide semiconductor layer along a first axis at a first dose and first implant energy to form a first channelized doping profile, wherein the first channelized doping profile has a first de-channeled peak at a first depth in the silicon carbide semiconductor layer and a first channeled peak at a second depth in the silicon carbide semiconductor layer that is greater than the first depth;
• and
• implanting second dopant ions having the first conductivity type into the silicon carbide semiconductor layer along the first axis at a second dose and second implant energy to form a second channelized doping profile, wherein the second channelized doping profile has a second channeled peak at a third depth in the silicon carbide semiconductor layer that is between the first depth and the second depth;
• wherein the first channelized doping profile and the second channelized doping profile form a combined doping profile that defines the buried implanted region.