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US 2023/0420569 A1Published application
Method for forming oxide semiconductor film, semiconductor device, and method for manufacturing semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei YAMAZAKI, Masahiro WATANABE, Mitsuo MASHIYAMA, Kenichi OKAZAKI, Motoki NAKASHIMA, Hideyuki KISHIDA
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Abstract
The impurity concentration in the oxide semiconductor film is reduced, and a highly reliability can be obtained.
Claims11
(canceled)
A memory device comprising a memory cell, the memory cell comprising:
- a transistor and a capacitor,
- wherein one of a source and a drain of the transistor is electrically connected to a bit line,
- wherein the other of the source and the drain of the transistor is electrically connected to one electrode of the capacitor,
- wherein a gate of the transistor is electrically connected to a word line,
- wherein a channel formation region of the transistor includes an oxide semiconductor layer,
- wherein the oxide semiconductor layer includes a crystal whose c-axis is arranged perpendicular to a surface of the oxide semiconductor layer, and
- wherein a potential is supplied to the one electrode of the capacitor when turning on the transistor, and the potential is held when turning off the transistor.
4 more elements
A memory device comprising a memory cell, the memory cell comprising:
- a transistor and a capacitor,
- wherein one of a source and a drain of the transistor is electrically connected to a bit line,
- wherein the other of the source and the drain of the transistor is electrically connected to one electrode of the capacitor,
- wherein a gate of the transistor is electrically connected to a word line,
- wherein a channel formation region of the transistor includes an oxide semiconductor layer,
- wherein the oxide semiconductor layer includes a crystal whose c-axis is arranged perpendicular to a surface of the oxide semiconductor layer,
- wherein a hydrogen concentration measured by secondary ion mass spectrometry in the oxide semiconductor layer is 5×1019 atoms/cm3 or lower, and
- wherein a potential is supplied to the one electrode of the capacitor when turning on the transistor, and the potential is held when turning off the transistor.
5 more elements
Dependencies are inferred from the claim text.