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US 2023/0420568 A1Published application
Method for forming oxide semiconductor film, semiconductor device, and method for manufacturing semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei YAMAZAKI, Masahiro WATANABE, Mitsuo MASHIYAMA, Kenichi OKAZAKI, Motoki NAKASHIMA, Hideyuki KISHIDA
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Abstract
The impurity concentration in the oxide semiconductor film is reduced, and a highly reliability can be obtained.
Claims25
(canceled)
A semiconductor device comprising:
- a first transistor and a second transistor,
- wherein the first transistor is provided over the second transistor,
- wherein a portion where one of a source and a drain of the second transistor is electrically connected to a gate of the second transistor is provided,
- wherein data is written in the portion through the first transistor,
- wherein the data is kept when the first transistor is an off-state,
- wherein a channel formation region of the first transistor includes a first oxide semiconductor layer,
- wherein a channel formation region of the second transistor includes a second oxide semiconductor layer,
- wherein the first oxide semiconductor layer includes a crystal whose c-axis is arranged perpendicular to a surface of the first oxide semiconductor layer, and
- wherein the second oxide semiconductor layer includes a crystal whose c-axis is arranged perpendicular to a surface of the second oxide semiconductor layer.
6 more elements
A semiconductor device comprising:
- a first transistor and a second transistor,
- wherein the first transistor is provided over the second transistor,
- wherein a floating gate portion is provided where one of a source and a drain of the second transistor is electrically connected to a gate of the second transistor,
- wherein a channel formation region of the first transistor includes a first oxide semiconductor layer,
- wherein a channel formation region of the second transistor includes a second oxide semiconductor layer,
- wherein the first oxide semiconductor layer includes a crystal whose c-axis is arranged perpendicular to a surface of the first oxide semiconductor layer, and
- wherein the second oxide semiconductor layer includes a crystal whose c-axis is arranged perpendicular to a surface of the second oxide semiconductor layer.
4 more elements
A semiconductor device comprising:
- a first transistor, a second transistor, and a capacitor element,
- wherein the first transistor is provided over the second transistor,
- wherein a portion where one of a source and a drain of the second transistor is electrically connected to a gate of the second transistor is provided,
- wherein data is written in the portion through the first transistor,
- wherein the data is kept when the first transistor is an off-state,
- wherein a channel formation region of the first transistor includes a first oxide semiconductor layer,
- wherein a channel formation region of the second transistor includes a second oxide semiconductor layer,
- wherein the first oxide semiconductor layer includes a crystal whose c-axis is arranged perpendicular to a surface of the first oxide semiconductor layer,
- wherein the second oxide semiconductor layer includes a crystal whose c-axis is arranged perpendicular to a surface of the second oxide semiconductor layer, and
- wherein the capacitor element is electrically connected to the gate of the second transistor.
7 more elements
A semiconductor device comprising:
- a first transistor, a second transistor, and a capacitor element,
- wherein the first transistor is provided over the second transistor,
- wherein a floating gate portion is provided where one of a source and a drain of the second transistor is electrically connected to a gate of the second transistor,
- wherein a channel formation region of the first transistor includes a first oxide semiconductor layer,
- wherein a channel formation region of the second transistor includes a second oxide semiconductor layer,
- wherein the first oxide semiconductor layer includes a crystal whose c-axis is arranged perpendicular to a surface of the first oxide semiconductor layer,
- wherein the second oxide semiconductor layer includes a crystal whose c-axis is arranged perpendicular to a surface of the second oxide semiconductor layer, and
- wherein the capacitor element is electrically connected to the gate of the second transistor.
5 more elements
Dependencies are inferred from the claim text.