Method for forming multi-gate semiconductor structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsCHUN-MING YANG, YU-JIUN PENG, YU-WEN WANG
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Abstract
A method for forming a multi-gate semiconductor structure is provided. A substrate including a fin structure is received. First portions of the fin structure are removed to expose a source/drain region of the fin structure. A semiconductor layer is formed in the source/drain region. Second portions of the fin structure are removed to expose a channel region of the fin structure. A surface of the channel region of the fin structure is cleaned. An interfacial layer is formed over the cleaned surface of the channel region of the fin structure.
Claims20
A method for forming a multi-gate semiconductor structure, comprising:
- receiving a substrate comprising a fin structure, the fin structure comprising a plurality of first semiconductor layers and a plurality of second semiconductor layers arranged alternating with the plurality of first semiconductor layers;
- disposing a sacrificial gate structure over a portion of the fin structure;
- disposing a dielectric structure over the substrate;
- removing a portion of the sacrificial gate structure to form a gate trench in the dielectric structure;
- removing the plurality of second semiconductor layers exposed through the gate trench;
- and
- performing a wet operation to trim a thickness of each of the plurality of first semiconductor layers and form a plurality of nanosheets in the gate trench.
A method for forming a multi-gate semiconductor structure, comprising:
- receiving a substrate comprising a fin structure;
- removing first portions of the fin structure to form a recess in the substrate;
- forming a plurality of inner spacers and a semiconductor layer in the recess;
- disposing a dielectric structure over the substrate;
- forming a gate trench in the dielectric structure;
- removing second portions of the fin structure exposed through the gate trench;
- and
- forming a plurality of nanosheets and an interfacial layer surrounding each of the plurality of nanosheets through a wet operation.
A method for forming a multi-gate semiconductor structure, comprising:
- receiving a substrate comprising a fin structure;
- removing first portions of the fin structure to expose a source/drain region of the fin structure;
- forming a semiconductor layer in the source/drain region;
- removing second portions of the fin structure to expose a channel region of the fin structure;
- cleaning a surface of the channel region of the fin structure;
- and
- forming an interfacial layer over the cleaned surface of the channel region of the fin structure.
The method of claim 19, wherein the oxidized component or the fluoride component of the fin structure is formed after the removal of the second portions of the fin structure.
Dependencies are inferred from the claim text.