Method for forming dual silicide in manufacturing process of semiconductor structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYing-Chi SU, Li-Wei CHU, Hung-Hsu CHEN, Chih-Wei CHANG, Ming-Hsing TSAI
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Abstract
A method for manufacturing a semiconductor structure includes: forming a patterned structure which includes a first semiconductor portion and a second semiconductor portion, the first and second semiconductor portions having different materials; and performing an oxide formation process to oxidize the first and second semiconductor portions such that a first oxidation layer formed on the first semiconductor portion has a thickness less than that of a second oxidation layer formed on the second semiconductor portion.
Claims20
A method for manufacturing a semiconductor structure, comprising:
- forming a patterned structure which includes a first semiconductor portion and a second semiconductor portion, the first and second semiconductor portions having different materials;
- and
- performing an oxide formation process to oxidize the first and second semiconductor portions such that a first oxidation layer formed on the first semiconductor portion has a thickness less than that of a second oxidation layer formed on the second semiconductor portion.
A method for manufacturing a semiconductor structure, comprising:
- forming a patterned structure which includes a p-type semiconductor portion and an n-type semiconductor portion;
- and
- performing an oxide formation process to oxidize the p-type semiconductor portion and the n-type semiconductor portion such that a first oxidation layer formed on the p-type semiconductor portion has a thickness less than that of a second oxidation layer (121) formed on the n-type semiconductor portion.
A method for manufacturing a semiconductor structure, comprising:
- forming a patterned structure which includes
- a semiconductor fin,
- a first semiconductor portion formed in the semiconductor fin,
- a second semiconductor portion formed in the semiconductor fin and spaced apart from the first semiconductor portion,
- two first gate features formed on the semiconductor fin at two opposite sides of the first semiconductor portion to define a first recess, and
- two second gate features formed on the semiconductor fin at two opposite sides of the second semiconductor portion to define a second recess;
- and
- performing an oxide formation process to oxidize the first and second semiconductor portions such that a first oxidation layer formed on the first semiconductor portion has a thickness less than that of a second oxidation layer formed on the second semiconductor portion.
Dependencies are inferred from the claim text.