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US 2023/0420564 A1Published application
Semiconductor device and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsShou-Wan Huang, Chun-Hsien Lin
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Abstract
A semiconductor device includes a substrate having a first region and a second region, a first fin-shaped structure extending along a first direction on the first region, a double diffusion break (DDB) structure extending along a second direction to divide the first fin-shaped structure into a first portion and a second portion, and a first gate structure and a second gate structure extending along the second direction on the DDB structure.
Claims8
A semiconductor device, comprising:
- a substrate having a first region and a second region;
- a first fin-shaped structure extending along a first direction on the first region;
- a double diffusion break (DDB) structure extending along a second direction to divide the first fin-shaped structure into a first portion and a second portion;
- a first gate structure and a second gate structure extending along the second direction on the DDB structure;
- and
- a protrusion on the DDB structure and between the first gate structure and the second gate structure.
3 more elements
Dependencies are inferred from the claim text.