Semiconductor structure and method of manufacture
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYong-Sheng HUANG, Ming Chyi LIU
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Abstract
A semiconductor structure and method of manufacture is provided. In some embodiments, a semiconductor structure includes a semiconductor layer comprising a first uppermost surface, a lowermost surface, and a first sidewall surface extending between the uppermost surface and the lowermost surface. A gate dielectric layer is over the semiconductor layer. A first gate electrode is over a portion of the gate dielectric layer over the uppermost surface of the semiconductor layer. A first source/drain region is in the semiconductor layer under the first uppermost surface and adjacent the first gate electrode. A second source/drain region is in the semiconductor layer under the lowermost surface of the semiconductor layer.
Claims19
A method of forming a semiconductor structure, comprising:
- forming a recess in a semiconductor layer;
- forming a gate dielectric layer over the semiconductor layer and in the recess;
- forming a gate electrode over the gate dielectric layer adjacent the recess;
- forming a first source/drain region under an uppermost surface of the semiconductor layer adjacent the gate electrode;
- and
- forming a second source/drain region in the semiconductor layer under a lowermost surface of the semiconductor layer in the recess.
The method of claim 5, wherein:
- forming the contact field plate comprises:
- forming a conductive layer the first dielectric layer over a portion of the semiconductor layer outside the recess, over the gate electrode, and over the semiconductor layer in the recess;
- and
- patterning the conductive layer to remove portions of the conductive layer not over the first dielectric layer.
The method of claim 5, comprising:
- forming a second dielectric layer over the gate dielectric layer, the gate electrode, the first dielectric layer, and the contact field plate;
- forming a first conductive structure in the second dielectric layer contacting the first source/drain region;
- forming a second conductive structure in the second dielectric layer contacting the second source/drain region;
- and
- forming a third conductive structure in the second dielectric layer contacting the contact field plate.
A semiconductor structure, comprising:
- a semiconductor layer comprising a first uppermost surface, a lowermost surface, and a first sidewall surface extending between the first uppermost surface and the lowermost surface;
- a gate dielectric layer over the semiconductor layer;
- a first gate electrode over a portion of the gate dielectric layer over the first uppermost surface of the semiconductor layer;
- a first source/drain region in the semiconductor layer under the first uppermost surface and adjacent the first gate electrode;
- and
- a second source/drain region in the semiconductor layer under the lowermost surface of the semiconductor layer.
A semiconductor structure, comprising:
- a semiconductor layer;
- a gate dielectric layer over the semiconductor layer;
- a first gate electrode over a first portion of the gate dielectric layer;
- a first source/drain region in the semiconductor layer under a first surface of the semiconductor layer and adjacent the first gate electrode;
- and
- a second source/drain region in the semiconductor layer under a second surface of the semiconductor layer lower than the first surface.
Dependencies are inferred from the claim text.