Vertical gallium nitride based fets with regrown source contacts

Abstract

A transistor includes a III-nitride substrate, a first III-nitride layer on the III-nitride substrate, wherein the first III-nitride layer is characterized by a first conductivity type, and a plurality of III-nitride fins on the first III-nitride layer, wherein each of the plurality of III-nitride fins is separated by one of a plurality of first recess regions and characterized by a fin surface, wherein the plurality of III-nitride fins are characterized by the first conductivity type. The transistor also includes a III-nitride gate layer having a second conductivity type opposite to the first conductivity type in the plurality of first recess regions, wherein a surface of the III-nitride gate layer is substantially coplanar with the fin surface, and a regrown III-nitride source contact portion coupled to each of the plurality of III-nitride fins, wherein the regrown III-nitride source contact portion is characterized by the first conductivity type.

Dependencies are inferred from the claim text.