Method for producing a transistor with a high degree of electron mobility, and produced transistor

A method for producing a transistor with high electron mobility, comprising:

• a) growing an epitaxial layer, which comprises a semiconductor material, onto a front side of a flat substrate, wherein the flat substrate is
• i) removable from the epitaxial layer by chemical etching and/or dry etching;
• and/or
• ii) removable from the epitaxial layer by application of laser radiation having a certain wavelength;
• b) applying at least one lateral and/or vertical transistor structure to a front side of the epitaxial layer;
• c) applying a temporary wafer to the front side of the epitaxial layer;
• d) removing the flat substrate from the bottom side of the epitaxial layer;
• e) applying a thermally conducting layer to the bottom side of the epitaxial layer;
• and
• f) completely removing the temporary wafer;
• wherein the flat substrate is completely removed from the bottom side of the epitaxial layer, and the thermally conducting layer is applied to the bottom side of the epitaxial layer so that the thermally conducting layer contacts at least 80% of the bottom side of the epitaxial layer.

A transistor with high electron mobility, comprising:

• a) an epitaxial layer, which comprises a semiconductor material;
• and
• b) at least one lateral and/or vertical transistor structure on an upper side of the epitaxial layer;
• and
• c) a thermally conducting layer on a bottom side of the epitaxial layer,
• wherein the thermally conducting layer, on the bottom side of the epitaxial layer, contacts at least 80% of the bottom side of the epitaxial layer.