ß-Ga2O3 Junction Barrier Schottky (JBS) Diodes with Sputtered p-Type NiO

A method for fabricating an electronic device, comprising:

• forming a semiconductor material stack including a layer of amorphous or polycrystalline silicon (a-Si/poly-Si) deposited on an upper surface of a first semiconductor material layer, the first semiconductor material having a first type of conductivity;
• depositing a layer of SiO2 on an upper surface of the a-Si/poly-Si layer;
• depositing a photoresist layer on an upper surface of the SiO2 layer;
• patterning the photoresist layer to define a predetermined plurality of areas for deposition of a second semiconductor material having a second type of conductivity into the first semiconductor materials, the second type of conductivity being different from the first type of conductivity;
• etching the SiO2 along the areas defined in the photoresist to form trenches in the SiO2 layer separated by SiO2 mesas;
• removing the photoresist and further etching the trenches in the SiO2 layer so as to extend the trenches into the a-Si/poly Si layer;
• etching each trench within the a-Si/poly-Si layer to form an undercut beneath the SiO2 material in each trench;
• further etching the trenches with the formed undercut areas into the first semiconductor material layer to form trenches in the first semiconductor material;
• cleaning the trenches and the undercut areas to remove physical and chemical damage caused during etching;
• forming a contact layer on a backside of the first semiconductor material layer;
• depositing a layer of the second semiconductor material into the trenches in the first semiconductor material layer, a thickness of the second semiconductor material in the first semiconductor material being sufficient to fill the trenches and form filled trenches of the second semiconductor material, the filled trenches having the second type of conductivity within the first semiconductor material a location, width, and separation of the filled trenches being defined by the patterning of the photoresist;
• further etching the a-Si/poly-Si layer to remove any remaining a-Si/poly-Si material not removed when the trenches were etched;
• removing the remaining SiO2 with the deposited SiO2 so that only the first semiconductor material layer with the filled trenches of the deposited second semiconductor material remain;
• and
• depositing a metal anode comprising a metal stack on an upper surface of the first semiconductor material layer with the filled trenches of the second semiconductor material, where the first semiconductor material serves as first type of contact to the metal anode and the second semiconductor material serves as a second type of contact to the metal anode.