Device with modified work function layer and method of forming the same

A method of making a semiconductor device, comprising

• forming a plurality of fin structures on a substrate;
• depositing a work function alloy layer over each fin structure of the plurality of fin structures, the work function alloy layer including a first element;
• forming a first protective layer over a portion of the work function alloy layer above each fin structure of the plurality of fin structures other than a first portion of the work function alloy layer;
• and
• reducing a content of the first element in the first portion of the work function alloy layer.

A method of making a semiconductor device, comprising

• forming a plurality of fin structures on a substrate, the plurality of fin structures including a first fin structure and a second fin structure;
• depositing a work function alloy layer over each fin structure of the plurality of fin structures, the work function alloy layer containing a first element, the work function alloy layer comprising a first portion over the first fin structure and a second portion over the second fin structure;
• and
• reducing a content of the first element in the first portion of the work function alloy layer without modifying a content of the first element in the second portion of the work function alloy layer.